ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,446, issued on July 28, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices with support pillars spaced along a... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,447, issued on July 28, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device and manufacturing method thereof" was... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,448, issued on July 28, was assigned to Kioxia Corp. (Tokyo). "Semiconductor device" was invented by Ken Komiya (Nagoya Aichi, Japan). Acc... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,449, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices and data storage syste... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,450, issued on July 28, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method of manufacturing semicon... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,451, issued on July 28, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Three-dimensional semiconductor memory device with high as... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,452, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Vertical memory device and method of manufac... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,453, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device having horizonta... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,455, issued on July 28, was assigned to UNIST (Ulsan National Institute of Science and Technology) (Ulsan, South Korea) and Postech Research... Read More
ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,456, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Ferroelectric-based memory devi... Read More